Rogueware NX200M M.2 PCIe 3.0 NVMe 256GB 3D NAND SSD

Rogueware NX200M M.2 PCIe NVME SSD – 256GB Capacity, M.2 PCIe Gen3x4 NVMe Interface, M.2 2280 Form Factor, Up to 1900Mbps Sequential Read, Up to 1100Mbps Sequential Write Speed, Up to 240k IOPS / 250k IOPS Random Read or Write, Up to 560TB Total Nytes Written, 1500G Shock Resistance,  0 C ~ 70 C Operating Temperature, Retail Box, 2 Year Warranty.

Product Overview 

This 256GB M.2 2280 NVMe SSD combines PCIe Gen3 x4 speeds of up to 1900 MB/s read and 1100 MB/s write with 3D QLC/TLC NAND, SLC caching, and advanced ECC for dependable everyday performance. Built with next-generation 3D NAND, NANDXtend™ protection, and support for S.M.A.R.T., TRIM, and NCQ, this M-Key M.2 drive delivers up to 240k/250k IOPS, 140TBW endurance, and strong reliability in a compact 7g design. Fast, efficient, and durable — this 256GB M.2 PCIe NVMe SSD offers high-speed storage, hardware encryption support, 1500G shock resistance, and 1.5 million-hour MTBF for smooth system upgrades.

Features

•Newest Generation Micron TLC 3D NAND Flash Technology
•Advanced NANDXtend ECC and Data Protection Technology
•Enhanced 3D NAND LDPC, Endurance and Retention
•SLC Caching for Optimal Sustained Performance
•Support S.M.A.R.T., TRIM Command, and NCQ
•Supports TCG and AES Encryption

Specifications

•Product Code: RWS256GNX200MH
•Description: Rogueware NX200M M.2 PCIe 3.0 NVMe SSD
•Capacity: 256GB
•Interface: M.2 PCIe Gen3x4 NVMe
•Form Factor: M.2 2280
Performance
•Sequential Read (Up To): 1900 MB/s
•Sequential Write (Up To): 1100 MB/s
•Random Read / Write: Up to 240k IOPS/250k IOPS
•Total Bytes Written (Up To): 560TB
•Shock Resistance: 1500G
•MTBF: 1,500,000 Hours
•Dimensions: 80mm x 22mm x 2.2mm (mm L x W x H)
•Weight: 7g (SSD) / 30g (Package)